High Resolution X-ray Reciprocal Space Mapping

A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.