Structural, Optical, and Electrical Studies on Pulse Plated $AgInSe_2$ Films

In this work, the pulse electrodeposition technique was employed for the first time to deposit $AgInSe_2$ films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM $SeO_2$. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 $Ω$/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to $AgInSe_2$. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 $Ω$ cm to 12.4 $Ω$ cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/$AgInSe_2$ solar cells increased with duty cycle.