Infrared Reflection of $MnTe_2$ under High Pressure

The IR reflection measurements of $MnTe_2$ were performed at room temperature under various pressures. It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of $10^{22} cm^{-3}$. Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.