Dynamics of Hot Electrons in ZnSe-ZnTe Double Barrier Heterostructures

In this paper we perform a detailed study of the transport of hot electrons in the double barrier heterostructures with the presence of a collector barrier. This system is considered as a double barrier resonant tunneling device. The electron is described by time-dependent Schrodinger equation, which allows us to study detailed dynamics of the carriers. The influence of an energy step in the collector area of the device on the tunneling probability is investigated. The significant role of dissipation due to electron-phonon interactions is presented.