Electronic Structure of f-Element Systems in the UV and VUV Energy Range

The main interest of this work is focused on the localization in energy of the different photon absorption mechanisms occurring in fluoride systems doped with rare earth ions by recording the visible luminescence excited by UV and VUV photons between 5 to 25 eV. Low temperature experiments have provided opportunity to measure in good conditions the charge transfer and the excited 4f$\text{}^{ n-1}$5d configuration transitions in the LaF$\text{}_{3}$:Ln$\text{}^{3+}$, O$\text{}^{2-}$ systems (Ln = Eu, Dy, Er).