Charge-Density-Wave Origin of Dip-Hump Structures in the Tunnel Spectra of Bi$\text{}_{2}$Sr$\text{}_{2}$CaCu$\text{}_{2}$O$\text{}_{8+δ}$

We calculated the differential conductance G as the function of the bias voltage V across the tunnel junction between a normal metal or a conventional superconductor and an inhomogeneous superconductor with charge density waves. Spatial averaging over random domains with varying superconducting and normal state properties was carried out. For high-T$\text{}_{c}$ oxides, irregularly distorted charge density wave patterns with spatially scattered values of various parameters were earlier shown to manifest themselves in a great body of experimental data. The results of calculation were applied to explain the well-known dip-hump structure in the G(V) dependence for Bi$\text{}_{2}$Sr$\text{}_{2}$CaCu$\text{}_{2}$O$\text{}_{8+δ}$ and other cuprates.